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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthJC RthCK - typ. 0,02 max. 0,17 0,29 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment fur mech. Befestigung mounting torque Schraube M6 screw M6 M1 -15 Al2O3 15 mm 8,5 mm 275 5 +15 Nm % Gewicht weight G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 200 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 400 350 Tvj = 25C 300 250 Tvj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 400 350 300 250 I C= f (VCE) Tvj= 125C VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 200 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 400 350 300 250 Tvj = 25C Tvj = 125C IC [A] 200 150 100 50 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 300 250 Tvj = 25C Tvj = 125C I F= f (VF) IF [A] 200 150 100 50 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 200 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 1,5,=RG,off = 1,5 , VCC= 300V, Tvj= 125C ,= , 16 14 12 E [mJ] 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Eon Eoff Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 18 16 14 12 E [mJ] 10 8 6 4 2 0 0 2 4 6 Eon Eoff Erec E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 200A , VCC= 300V , Tvj = 125C 8 10 12 14 16 RG [] 6 (8) BSM 200 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 1 0,1 ZthJC [K / W] Zth:IGBT 0,01 Zth:Diode 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec] 1 7,2 0,0018 102,2 0,0487 2 89,1 0,0240 98,0 0,0169 3 59,9 0,0651 61,6 0,1069 4 13,8 0,6626 28,2 0,9115 : IGBT : IGBT : Diode : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 450 400 350 300 250 200 VGE= +15V, R G,off = 1,5, Tvj= 125C , IC [A] IC,Modul 150 100 50 0 0 100 200 300 400 500 600 700 IC,Chip VCE [V] 7 (8) BSM 200 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Gehausemae / Schaltbild Package outline / Circuit diagram 13 10 M5 2,8 x 0,5 6 1 17 2 6 3 6 7 23 80 94 23 17 5 4 6 7 1 3 5 2 4 8 (8) BSM 200 GB 60 DLC 2000-02-08 |
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